Mitsubishi FG2000FX-50DA

Overview

The Mitsubishi FG2000FX-50DA is a state-of-the-art Gate Turn-Off (GTO) thyristor designed for exceptional performance in high-power electronic systems. As part of Mitsubishi Electric's renowned line of power semiconductors, this robust component is engineered to meet the stringent demands of modern industrial applications. With impressive ratings of 2500V and 1050A, the FG2000FX-50DA is the ideal choice for developers seeking unparalleled reliability, efficiency, and control in their power conversion solutions. Its advanced design, featuring an anode-short configuration and a durable press pack, ensures superior thermal management and electrical characteristics, making it suitable for even the most challenging environments.

This high-voltage, high-current GTO thyristor excels in applications requiring precise power switching and handling large currents, providing a critical component for stable and efficient operation of complex electronic systems. Its design prioritizes longevity and consistent performance under extreme conditions, upholding Mitsubishi Electric's reputation for quality and innovation.

Key Features

• Repetitive Peak Off-State Voltage: 2500V for high-voltage applications
• Average On-State Current: 1050A for substantial power handling
• High Surge Current Rating: 16kA for robust transient capability
• Anode-Short Configuration for optimized performance
• Press Pack Package ensuring superior thermal and mechanical integrity
• Excellent dIT/dt: 1000 A/µs for rapid current changes
• Fast Turn-On Time: 30 µs for efficient switching operations
• Reliable Gate Turn-Off Current: 1000 A for precise control

Technical Specifications

• Model: FG2000FX-50DA
• Type: Gate Turn-Off Thyristor (GTO)
• Package: Press Pack (Anode-Short Type)
• VDRM/VRRM (Repetitive Peak Off-State Voltage): 2500 V
• VRDC (DC Reverse Voltage): 2000 V
• IT(AV) (Average On-State Current): 1050 A
• ITQRM (Repetitive Peak Controllable On-State Current): 2200 A
• IT(RMS) (RMS On-State Current): 1650 A
• ITSM (Surge On-State Current): 16,000 A
• I²t (I Squared T for Fusing): 10.5 × 10⁵ A²s
• VGT (Gate Trigger Voltage): 2.4 V
• IGT (Gate Trigger Current): 610 mA
• IGQM (Peak Gate Turn-Off Current): 1000 A
• dI/dt (Critical Rate of Rise of On-State Current): 1000 A/µs
• tgt (Gate Turn-On Time): 30 µs
• Rth j-f (Thermal Resistance, Junction to Case): 0.017 °C/W
• Mounting Force: 18–24 kN
• Weight: 760 g
• Junction Temperature (Tj): –40 °C to +125 °C
• Storage Temperature (Tstg): –40 °C to +150 °C

Applications

• Industrial Inverters for motor control and power conversion
• D.C. Choppers in power supplies and motor drives
• Induction Heating Systems requiring high-frequency switching
• DC/DC Converters for efficient voltage transformation
• High-Power Switching Systems in renewable energy and traction
• Uninterruptible Power Supplies (UPS) for critical backup

Why Choose This Model?

• Exceptional High Surge and Switching Capacity: Ensures durability and reliability under challenging conditions.
• Rugged Press Pack Structure: Provides superior mechanical strength and efficient heat dissipation, extending operational life.
• Trusted Mitsubishi Reliability: Leveraging decades of expertise in power electronics for consistent, high-quality performance.
• Ideal for Compact, High-Efficiency Designs: Enables the creation of smaller, more powerful, and energy-efficient systems.
• Advanced Anode-Short Configuration: Offers enhanced electrical characteristics and improved switching times.
• Worldwide Availability: Easily accessible for global projects and maintenance.

Order Now

Elevate your power electronic designs with the Mitsubishi FG2000FX-50DA GTO thyristor. This high-performance component is readily available and ready to ship worldwide, ensuring your projects stay on schedule. Experience the hallmark of Mitsubishi Electric quality and harness the power of reliable and efficient switching for your most demanding applications. Secure your supply today and power your innovations with confidence.