Mitsubishi CM200DY‑12H IGBT module, dual 200 A 600 V, trench-gate, insulated baseplate

Mitsubishi CM200DY‑12H

$231.99
Sale price  $231.99 Regular price 
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Mitsubishi CM200DY‑12H IGBT module, dual 200 A 600 V, trench-gate, insulated baseplate

Mitsubishi CM200DY‑12H

$231.99
Sale price  $231.99 Regular price 

Overview

The Mitsubishi CM200DY-12H is a high-performance dual IGBT module engineered for demanding industrial applications requiring robust power switching and efficient thermal management. This module integrates two trench-gate IGBTs alongside fast-recovery diodes, all mounted on an insulated baseplate. Part of Mitsubishi Electric's renowned IGBT module series, the CM200DY-12H is designed to deliver exceptional reliability and performance in critical systems such as motor drives, uninterruptible power supplies (UPS), and induction heating equipment. Its advanced design ensures low power losses and superior switching characteristics, making it an ideal choice for power conversion and control.

Key Features

  • Dual IGBT configuration with integrated fast-recovery diodes
  • Trench-gate technology for optimal VCE(sat) and switching efficiency
  • Insulated baseplate for simplified heat sink integration and enhanced thermal performance
  • Robust chassis-mount housing ensures durability and secure installation
  • High surge current capability for reliable operation in challenging conditions
  • Excellent thermal stability across a wide operating temperature range
  • Low ~2.1V VCE(sat) at 200A for reduced power dissipation

Technical Specifications

  • Part Number: CM200DY-12H
  • Configuration: Dual IGBT + Dual Free-Wheeling Diodes
  • Collector Current (Ic): 200 A continuous (400 A pulse)
  • Collector-Emitter Voltage (Vces): 600 V
  • Power Dissipation: Approximately 780 W at Tc = 25 °C
  • VCE(sat): Approximately 2.1 V at 15 V gate drive, 200 A
  • Gate-Emitter Voltage (VGE): ±20 V maximum
  • Input Capacitance (Cies): 110–160 nF
  • Thermal Resistance Rth(j-c): IGBT ~0.16 °C/W, diode ~0.35 °C/W
  • Baseplate Isolation: Approximately 2.5 kV RMS
  • Operating Temperature (Junction): –40 °C to +150 °C
  • Mounting: Chassis (M5/M6 hardware)
  • Weight: Approximately 270 g

Applications

  • Industrial motor drives and sophisticated servo systems
  • Uninterruptible Power Supplies (UPS) and power quality improvement systems
  • Welding equipment and high-frequency induction heating units
  • Advanced power conversion equipment and inverters
  • Robotics and industrial automation platforms requiring high-reliability components
  • Renewable energy systems, including solar and wind power inverters

Why Choose This Model?

  • High Performance: Delivers superior current and voltage handling in a compact chassis-mount design.
  • Exceptional Efficiency: Trench-gate IGBTs with integrated diodes minimize switching losses, enhancing overall system efficiency.
  • Enhanced Reliability: Insulated baseplate design improves thermal management, contributing to a longer service life and stable operation.
  • Industrial Durability: Mitsubishi Electric engineering ensures ruggedness and dependability for challenging industrial environments.
  • Global Availability: Readily available in new and surplus markets, with worldwide shipping options for convenient procurement.
  • Trusted Brand: Benefit from the proven quality and innovation of Mitsubishi Electric's power semiconductor technology.

Order Now

Elevate the performance and reliability of your industrial power systems with the Mitsubishi CM200DY-12H IGBT module. This module stands as a testament to Mitsubishi Electric's commitment to advanced power electronics, offering an unparalleled combination of power, efficiency, and robust design. Available for immediate acquisition in new and surplus conditions, and eligible for worldwide shipping, the CM200DY-12H is the ideal component for your next high-performance application. Explore our comprehensive collection of Mitsubishi IGBT Modules and a wide array of other Power Electronics Components to meet all your semiconductor needs.

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